unisonic technologies co., ltd UTT20P04 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-774.a -40v, -20a p-channel power mosfet ? description the utc UTT20P04 is a p-channel power mosfet using utc?s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. ? features *r ds(on) <42m ? @ v gs =-10v, i d =-20a * high switching speed ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UTT20P04l-tn3-r UTT20P04g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: sourcs
UTT20P04 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw ver.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss -40 v gate-source voltage v gss 20 v drain current continuous i d -20 a pulsed i dm -80 a avalanche current i ar -20 a avalanche energy single pulsed e as 36 mj power dissipation p d 50 w junction temperature t j +150 c storage temperature range t stg -55~+150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. 2. absolute maximum ratings are stress ratings only and functional device operation is not implied. 3. t j =25c, v dd =-25v, l=0.1mh, r g =25 , i as =-20a. ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =-250a, v gs =0v -40 v drain-source leakage current i dss v ds =-40v 1 a gate-source leakage current forward i gss v gs =+20v, v ds =0v 100 na reverse v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) i d =-250a -1 -3 v static drain-source on-state resistance r ds(on) v gs =-10v, i d =-20a 42 m ? v gs =-5v, i d =-8a 55 m ? dynamic parameters input capacitance c iss v gs =0v, v ds =-25v, f=1mhz 1190 pf output capacitance c oss 185 pf reverse transfer capacitance c rss 95 pf switching parameters total gate charge q g v gs =-10v, v dd =-30v, i d =-20a 17 nc gate to source charge q gs 5.5 nc gate to drain charge q gd 3 nc turn-on delay time t d ( on ) v dd =-30v, i d =-20a r g =25 ? , v gs =-10v 6 ns rise time t r 16 ns turn-off delay time t d ( off ) 26 ns fall-time t f 10 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s -20 a maximum body-diode pulsed current i sm -80 a drain-source diode forward voltage v sd i s =-20a -1.2 v
UTT20P04 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-774.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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